To Explore the Future of Quantum ICs for Space applications: A Study on Cryogenic Behavior of X-ray Irradiated 22nm FD-SOI MOSFETs

<jats:p>This paper investigates the cryogenic behavior of 22-nm Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs subjected to X-ray irradiation. In NMOSFETs, experimental results reveal that total ionizing dose (TID) radiation-induced degradations on Ioff and Vth are compensated at 20 K. However, PFETs experience a further increase in Vth with the combined influence from both conditions. A transimpedance amplifier (TIA) is developed to assess the impact of irradiation on cryogenic quantum ICs. Simulations based on a custom SPICE model indicate that pre-irradiation reduces the TIA’s DC gain at 20 K, highlighting the challenges from radiation harsh environment for quantum ICs intended for space environments in the future.</jats:p>