Abstract
<jats:p>The paper proposes an approach to accounting for the influence of elastic and plastic strain fields generated by virtual dislocations and declinations on the electronic structure of graphene-like structures within the framework of a tight-binding model. The model takes into account non-uniform changes in hopping integrals arising from non-uniform strains. Various types of dislocations and its influence on the electronic structure of graphene are considered. It is shown that dislocations without additional shear strains do not lead to the formation of a band gap. Based on the constructed model, it is possible to predict the necessary virtual dislocations and strain values to achieve a stable band gap in graphene, and, consequently, its semiconductor properties. The model explains the small band gap width when graphene is deposited on a substrate without additional strains.</jats:p>