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Dependence of the capacitance of trap states at the oxide–semiconductor interface on the interface trap density in nanoscale silicon-on-insulator FinFET transistors and its effect on electrophysical parameters

Authors: Mirzabakhrom Foziljonov, Nuritdin Yunusaliev, Biloliddin Ergashev et al.

Publication: Advances in Science and Technology Research Journal

Published: Oct 1, 2026

Source: Crossref

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Dependence of the capacitance of trap states at the oxide–semiconductor interface on the interface trap density in nanoscale silicon-on-insulator FinFET transistors and its effect on electrophysical parameters

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