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Dislocation defects in 4H‑SiC crystals grown by physical vapor transport: Evolution, origins, and control strategies

Authors: Peng Gu, Tianle Wang, Zefeng Guan et al.

Publication: Journal of Materials Science & Technology

Published: Apr 1, 2027

Source: Crossref

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Dislocation defects in 4H‑SiC crystals grown by physical vapor transport: Evolution, origins, and control strategies

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